Effect of ion-beam etching damage in Fe-Co tapered main pole

被引:4
|
作者
Ohsawa, Yuichi [1 ,2 ]
Yamakawa, Kiyoshi [2 ]
Muraoka, Hiroaki [2 ]
机构
[1] Toshiba Co Ltd, Corp R&D Ctr, Kawasaki, Kanagawa 2128582, Japan
[2] Tohoku Univ, RIEC, Aoba Ku, Sendai, Miyagi 9808577, Japan
关键词
HEAD; FILMS;
D O I
10.1063/1.3070584
中图分类号
O59 [应用物理学];
学科分类号
摘要
Effect of ion-beam etching damage in Fe-Co films was estimated and magnetic calculation of the planar head using tapered main pole (MP) including the etching damage was performed. The etching test on the Fe-Co films, whose thickness corresponds to half of the trackwidth for several Tbits/in.(2), showed decrease in saturation magnetic flux density (B(s)) and increase in coercivity with a 250 eV ion beam. The magnetic calculation showed relatively large decrease in head field and head field gradient as Bs of the damaged region decreases from 2.4 T. Damage control in the MP fabrication is one of the important issues for Tbits/in.(2)-era write heads. (c) 2009 American Institute of Physics. [DOI: 10.1063/1.3070584]
引用
收藏
页数:3
相关论文
共 50 条
  • [31] MICROFABRICATION BY ION-BEAM ETCHING.
    Lee, Robert E.
    Semiconductor International, 1980, 3 (01): : 73 - 80
  • [32] ION-BEAM ASSISTED ETCHING AND DEPOSITION
    GAMO, K
    NAMBA, S
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1990, 8 (06): : 1927 - 1931
  • [33] ION-BEAM ETCHING FOR BETTER BONDING
    不详
    CME-CHARTERED MECHANICAL ENGINEER, 1984, 31 (11): : 101 - 101
  • [34] Effect of ion species on the accumulation of ion-beam damage in GaN
    Kucheyev, SO
    Williams, JS
    Jagadish, C
    Zou, J
    Li, G
    Titov, AI
    PHYSICAL REVIEW B, 2001, 64 (03):
  • [35] APPLICATION OF ION-BEAM ETCHING IN MICROELECTRONICS
    EHRIG, K
    SCHLENK, R
    FALZ, M
    BIGL, F
    NEUMANN, H
    FAUST, B
    VACUUM, 1987, 37 (1-2) : 197 - 197
  • [36] ION-BEAM ETCHING OF SURFACE GRATINGS
    SMITH, HI
    MELNGAILIS, J
    WILLIAMSON, RC
    BROGAN, WT
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1973, 10 (06): : 1127 - 1127
  • [37] ION-BEAM ASSISTED ETCHING.
    Kireev, V.Yu.
    Nazarov, D.A.
    Kuznetsov, V.I.
    Soviet surface engineering and applied electrochemistry, 1986, (06): : 52 - 57
  • [38] VLSI REACTIVE ION-BEAM ETCHING
    CUSTODE, FZ
    FEWER, W
    SPLINTER, M
    DOWNEY, DF
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (03) : C105 - C105
  • [39] FOCUSED ION-BEAM ETCHING OF NITROCELLULOSE
    YASUOKA, Y
    HARAKAWA, K
    GAMO, K
    NAMBA, S
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (01): : 405 - 408
  • [40] LOW-DAMAGE AND SMOOTH ETCHING OF GAAS BY USING A NEON ION-BEAM
    UENISHI, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (4A): : 2037 - 2042