Characterization of 4.5 kV/2.4 kA Press Pack IGBT Including Comparison with IGCT

被引：0

作者：

Alvarez, Rodrigo ^{[1
]}

Filsecker, Felipe ^{[1
]}

Buschendorf, Martin ^{[1
]}

Bernet, Steffen ^{[1
]}

机构：

[1] Tech Univ Dresden, Power Elect Lab, D-01062 Dresden, Germany

来源：

2013 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE) | 2013年

关键词：

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

IGBT press pack devices have become a serious competition for IGCTs in high power industrial applications. This paper presents an overview of state-of-the-art medium voltage power semiconductors with active turn-off capability. The main focus of the paper is the characterization of a 125 mm, 4.5 kV, 2.4 kA press pack SPT-plus-IGBT and the corresponding freewheeling diode at hard switching. Furthermore, the losses, the behavior and the semiconductor stress (peak power) are investigated. Finally the device characteristics are compared to that of state-of-the-art 91 mm, 4.5 kV, 3.8 kA IGCTs.

引用

页码：260 / 267

页数：8

共 33 条

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2012 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE), 2012, : 451 - 458
[32] Commutation Behavior Analysis of a Dual 3L-ANPC-VSC Phase-Leg PEBB Using 4.5-kV and 1.5-kA HV-IGBT Modules
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[33] Soft-switching characterization of medium-voltage IGBT power modules and press-pack diodes in a 1 kHz mega-watt dc/dc resonant converter
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