Molecular orientation dependence of hole-injection barrier in pentacene thin film on the Au surface in organic thin film transistor

被引:67
|
作者
Ihm, Kyuwook
Kim, Bongsoo
Kang, Tai-Hee
Kim, Ki-Jeong
Joo, Min Ho
Kim, Tae Hyeong
Yoon, Sang Soo
Chung, Sukmin [1 ]
机构
[1] POSTECH, Dept Phys, Pohang 790784, South Korea
[2] Pohang Accelerator Lab, Pohang 790784, South Korea
[3] Pohang Accelerator Lab, Beamline Res Div, Pohang 790784, South Korea
[4] LG Elect Inst Technol, Devices & Mat Lab, Seoul 137724, South Korea
[5] POSTECH, Dept Phys, Pohang 790784, South Korea
关键词
D O I
10.1063/1.2227712
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have investigated the effects of a buffer layer insertion on the performance of the pentacene based thin film transistor with a bottom contact structure. When the pentacene molecules have a standing up coordination on the Au surface that is modified by the benzenethiol or methanethiol, the transition region in the pentacene thin film is removed along the boundary between the Au and silicon oxide region, and the hole-injection barrier decreases by 0.4 eV. Pentacene on various surfaces showed that the highly occupied molecular level is 0.2-0.4 eV lower in the standing up coordination than in the lying down coordination. (c) 2006 American Institute of Physics.
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页数:3
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