Over 7% magnetic field-induced strain in a Ni-Mn-Ga five-layered martensite

被引：90
|
作者：
Pagounis, E. [1 ]
Chulist, R. [2 ]
Szczerba, M. J. [2 ]
Laufenberg, M. [1 ]
机构：
[1] ETO MAGNETIC GmbH, D-78333 Stockach, Germany
[2] Polish Acad Sci, Inst Met & Mat Sci, PL-30059 Krakow, Poland
来源：
APPLIED PHYSICS LETTERS | 2014年 / 105卷 / 05期
关键词：
SHAPE-MEMORY ALLOYS; TEMPERATURE-DEPENDENCE; SINGLE-CRYSTALS;
D O I：
10.1063/1.4892633
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A Ni-Mn-Ga single crystal with a modulated five-layered martensite structure is reported, demonstrating giant magnetic field induced strain (MFIS) of 7.1% at room temperature and of 6% at temperatures close to the austenite transformation (T-A = 71 degrees C). The room temperature MFIS clearly exceeds the best results of around 6% measured earlier in 10M martensites. The larger MFIS is connected to the huge (>1%) change in the lattice distortion of the 10M structure, obtained within a narrow temperature interval of 47 K, which has been previously observed only during intermartensitic transformation. The present material shall effectively reduce the size of magnetic shape memory actuators. (C) 2014 AIP Publishing LLC.
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页数：4
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