Semi-Empirical Aging Model Development Via Accelerated Aging Test

被引:0
|
作者
Afacan, Engin [1 ]
Dundar, Gunhan [1 ]
Pusane, Ali E. [1 ]
Baskaya, Faik [1 ]
机构
[1] Bogazici Univ, Dept Elect & Elect Engn, Bebek, Turkey
关键词
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中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
Modelling of the degradation mechanisms has a crucial role during the aging analysis, which determines the accuracy of the lifetime estimation. Conventionally, analytical and semi-empirical models are utilized during the aging analysis. Analytical models employ deterministic equations during the degradation calculation and they can be scaled for different technology nodes; hence providing flexibility. However, scaling errors and approximations during the model development may degrade the accuracy. On the other hand, semi-empirical models are generated via accelerated aging test (AAT) performed on the silicon, which often promise more reliable results for a given technology. This paper comprehensively examines the semi-empirical modelling process from test chip design to AAT experiments.
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页数:4
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