Mechanism of irradiation induced degradation of solar cells

被引：0
|
作者：
Zazoui, M [1 ]
Aldin, AZ [1 ]
Mbarki, M [1 ]
Bourgoin, JC [1 ]
机构：
[1] FST Mohammedia, Phys Mat Condensee Lab, Yasmina, Morocco
来源：
PROCEEDINGS OF THE SIXTH EUROPEAN SPACE POWER CONFERENCE (ESPC) | 2002年 / 502卷
关键词：
D O I：
暂无
中图分类号：
V [航空、航天];
学科分类号：
08 ; 0825 ;
摘要：
We derive the dependences of the short circuit current and open circuit voltage of a solar cell versus the logarithm of the fluence in terms of the characteristics of the recombination centers introduced by an irradiation. Then from experimental data we extract the values of these characteristics for GaAs and GaInP cells. We finally apply this analysis to modelize the degradation of a GaAs/GaInP/Ge cell.
引用
收藏
页码：747 / 751
页数：3
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