An in-plane anisotropic organic semiconductor based upon poly(3-hexyl thiophene)

被引：77
|
作者：
Amundson, KR [1 ]
Sapjeta, BJ [1 ]
Lovinger, AJ [1 ]
Bao, ZN [1 ]
机构：
[1] Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA
来源：
THIN SOLID FILMS | 2002年 / 414卷 / 01期
关键词：
organic semiconductor; field effect transistor; anisotropic surface ordering; polytetrafluoroethylene; poly(3-hexyl thiophene);
D O I：
10.1016/S0040-6090(02)00338-3
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The structure and field effect mobility of a bilayer film of friction-transferred polytetrafluoroethylene (PTFE) and regioregular poly(3-hexyl thiophene) (P3HT) on a silicon dioxide substrate was studied. Friction transferred PTFE exhibits a high density of ridges and grooves on the 10-nm scale running along the friction transfer direction. Solvent cast P3HT deposits with a significant tendency for the polymer chain axis to align along the PTFE friction transfer direction. In addition, the P3HT component covers most of the surface, but leaves some high PTFE ridges exposed. The field effect mobility was highly anisotropic, with the larger mobility along the PTFE friction transfer direction. Intrinsic as well as topological causes for this anisotropy are considered. (C) 2002 Published by Elsevier Science B.V.
引用
收藏
页码：143 / 149
页数：7
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