Oxidized Layer of CdZnTe Studied by C-V Characteristics

被引：0
|
作者：
Fan, Jian-rong [1 ]
Sang, Wen-bin [1 ]
Lu, Yue [1 ]
Min, Jia-hua [1 ]
Liang, Xiao-yan [1 ]
Hu, Dong-ni [1 ]
机构：
[1] Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200072, Peoples R China
来源：
2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1-4 | 2008年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, the CZT oxidized layers on cadmium zinc telluride (CZT) wafer formed by two-step chemical passivation process (KOH-KCl + NH(4)F/H(2)O(2)) were investigated by using XRD, ED-XRF, SEM. The results show that the oxidized layer obtained by using this process has a very uniform and compact morphology and consists mainly of TeO(2),, TeO(3) and CdTeO(3). In particular, the thickness of the oxidized layer on the CZT was obtained by using C-V measurements for the first time. The dependence of the thickness of the oxidized layer on the passivation time was obtained and the main factors influencing the results of the C-V measurements were also discussed.
引用
收藏
页码：753 / 756
页数：4
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