Relationship between the electric performance and the photoluminescence spectra of resonant tunnelling diodes

被引：0
|
作者：
Zhang, XX [1 ]
Zeng, YP
Wang, XG
Wang, BQ
Zhu, ZP
机构：
[1] Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China
[2] Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Key Lab Infrared Phys, Shanghai 200083, Peoples R China
来源：
CHINESE PHYSICS | 2004年 / 13卷 / 09期
关键词：
resonant tunnelling diode; photoluminescence; negative differential resistance; integrated luminescence intensity;
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Resonant tunnelling diodes with different structures were grown. Their photoluminescence spectra were investigated. By contrast, the luminescence in the quantum well is separated from that of other epilayers. The result is obtained that the exciton of the luminescence in the quantum well is partly come from the cap layer in the experiment. So the photoluminescence spectrum is closely related to the electron transport in the resonant tunnelling diode structure. This offers a method by which the important performance of resonant tunnelling diode could be forecast by analysing the integrated photoluminescence intensities.
引用
收藏
页码：1560 / 1563
页数：4
相关论文
共 50 条
  • [31] Study on opto-electronic integration of resonant tunnelling diodes
    Niu Ping-juan
    Hu Hai-rong
    Liu Hong-wei
    Wang Wen-xin
    Shang Xun-Zhong
    NANOSCIENCE AND TECHNOLOGY, PTS 1 AND 2, 2007, 121-123 : 533 - 535
  • [32] Resonance and current instabilities in AlN/GaN resonant tunnelling diodes
    Belyaev, AE
    Makarovsky, O
    Walker, DJ
    Eaves, L
    Foxon, CT
    Novikov, SV
    Zhao, LX
    Dykeman, RI
    Danylyuk, SV
    Vitusevich, SA
    Kappers, MJ
    Barnard, JS
    Humphreys, CJ
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2004, 21 (2-4): : 752 - 755
  • [33] Unconditionally stable high current density resonant tunnelling diodes
    Dupuis, O
    Pesant, JC
    Mounaix, P
    Mollot, F
    Vanbésien, O
    Lippens, D
    TERAHERTZ SPECTROSCOPY AND APPLICATIONS 11, 1999, 3828 : 326 - 334
  • [34] 4 LOGIC STATES USING 2 RESONANT TUNNELLING DIODES
    VANHOOF, C
    GENOE, J
    VANHOVE, M
    VANROSSUM, M
    MERTENS, R
    BORGHS, G
    ELECTRONICS LETTERS, 1989, 25 (04) : 259 - 260
  • [35] Resonant tunnelling diodes based on twisted black phosphorus homostructures
    Pawan Kumar Srivastava
    Yasir Hassan
    Duarte J. P. de Sousa
    Yisehak Gebredingle
    Minwoong Joe
    Fida Ali
    Yang Zheng
    Won Jong Yoo
    Subhasis Ghosh
    James T. Teherani
    Budhi Singh
    Tony Low
    Changgu Lee
    Nature Electronics, 2021, 4 : 269 - 276
  • [36] Nanoelectronic pulse generators based on gated resonant tunnelling diodes
    Wernersson, LE
    Lindström, P
    Nauen, A
    Lind, E
    INTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS, 2004, 32 (05) : 431 - 437
  • [37] Microwave performance of GaxIn1-xP/Ga0.47In0.53As resonant tunnelling diodes
    Dep of Electrical Engineering, Haifa, Israel
    Electron Lett, 12 (1267-1268):
  • [38] Microwave performance of GaxIn1-x/Ga0.47In0.53As resonant tunnelling diodes
    Cohen, GM
    Ritter, D
    ELECTRONICS LETTERS, 1998, 34 (12) : 1267 - 1268
  • [39] Numerical study of single-electron resonant tunnelling via a few ionised donors in laterally confined resonant tunnelling diodes
    Mizuta, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (4A): : 2012 - 2019
  • [40] Magnetic resonant tunnelling diodes as voltage-controlled spin selectors
    Gould, C
    Slobodskyy, A
    Slobodskyy, T
    Grabs, P
    Becker, CR
    Schmidt, G
    Molenkamp, LW
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2004, 241 (03): : 700 - 703
12345