Development of lead-free piezoelectric materials using domain wall engineering

被引:2
|
作者
Wada, Satoshi [1 ]
Yako, Koichi [1 ]
Muraishi, Tomomitsu [1 ]
Kakemoto, Hirofumi [1 ]
Tsurumi, Takaaki [1 ]
机构
[1] Tokyo Inst Technol, Dept Met & Ceram Sci, Tokyo 1528552, Japan
来源
关键词
single crystal; barium titanate; piezoelectric property; domain wall; domain wall engineering; engineered domain configuration; lead-free piezoelectrics;
D O I
10.4028/www.scientific.net/KEM.320.151
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
For the [111] oriented barium titanate (BaTiO3) single crystals, the patterning electrode was applied to induce the finer engineered domain configurations with domain size of 3 mu m. The poling treatment was performed at 134 degrees C under electric fields below 6 kV/cm to inhibit the burning of the patterning electrode with photoresist. As the results, the gradient domain sizes from 3 to 8-9 pm were induced into the 31 resonator. The d(31) was measured at -243.2 pC/N, and this value was almost 70 % of the expected d(31) of -337.7 pC/N for the resonator with domain size of 3 mu m. This difference was originated from lower applied electric field below 6 kV/cm. However, this study was revealed that the patterning electrode was very powerful tool to induce much finer domain sizes below 5 mu m.
引用
收藏
页码:151 / 154
页数:4
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