Field dependence of the rate of thermal emission of holes from the VGaSAs complex in gallium arsenide

被引：3

作者：

Bulyarskii, SV ^{[1
]}

Grushko, NS ^{[1
]}

Zhukov, AV ^{[1
]}

机构：

[1] IN Ulyanov State Univ, Ulyanovsk 432700, Russia

来源：

SEMICONDUCTORS | 2000年 / 34卷 / 01期

关键词：

D O I：

10.1134/1.1187958

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

An algorithm is proposed for evaluating the field dependence of the emission rate based on the form-function of optical transition. Experiment and calculations are carried out for the VGaSAs complex in a gallium arsenide crystal. The model proposed is compared with theoretical studies based on one-coordinate approximation. It is concluded that the one-coordinate model can be used to describe the field dependence of hole emission rate from the VGaSAs center. (C) 2000 MAIK "Nauka/Interperiodica".

引用

页码：40 / 44

页数：5

共 50 条

[1] Field dependence of the rate of thermal emission of holes from the VGaSAs complex in gallium arsenide
S. V. Bulyarskii
N. S. Grushko
A. V. Zhukov
Semiconductors, 2000, 34 : 40 - 44
[2] HIGH-FIELD ELECTRON EMISSION FROM GALLIUM ARSENIDE
SAVAGE, WR
JOURNAL OF APPLIED PHYSICS, 1963, 34 (04) : 732 - &
[3] EMISSION FIELD INVESTIGATIONS OF GALLIUM-ARSENIDE
BLAZHNOVA, EI
MILESHKINA, NV
YUGAI, LY
ZHURNAL TEKHNICHESKOI FIZIKI, 1986, 56 (06): : 1183 - 1187
[4] PHOTOEMISSION OF HOLES FROM TIN INTO GALLIUM ARSENIDE
WILLIAMS, R
PHYSICAL REVIEW LETTERS, 1962, 8 (10) : 402 - &
[5] DEPENDENCE OF LIFETIME OF OPTICAL PHONONS IN GALLIUM ARSENIDE ON DENSITY OF HOLES AND ELECTRONS
EVDOKIMOV, VM
KUKHARSK.AA
SUBASHIE.VK
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1970, 4 (03): : 476 - +
[6] FIELD-EMISSION MICROSCOPY OF GALLIUM-ARSENIDE
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JOURNAL DE PHYSIQUE, 1986, 47 (C-2): : 53 - 58
[7] DEPENDENCE OF THERMAL EMF ON HOLE CONCENTRATION IN GALLIUM ARSENIDE CRYSTALS
EMELYANE.OV
KESAMANL.FP
NASLEDOV, DN
SIDOROV, VG
TALALAKI.GN
PHYSICA STATUS SOLIDI, 1965, 8 (03): : K155 - &
[8] TEMPERATURE DEPENDENCE OF VELOCITY FIELD CHARACTERISTICS OF TYPE GALLIUM ARSENIDE
INOUE, M
NAKADE, Y
SHIRAFUJI, J
INUISHI, Y
JAPANESE JOURNAL OF APPLIED PHYSICS, 1971, 10 (06) : 818 - +
[9] MAGNETIC-FIELD DEPENDENCE OF THE HALL FACTOR OF GALLIUM-ARSENIDE
RODE, DL
WOLFE, CM
STILLMAN, GE
INSTITUTE OF PHYSICS CONFERENCE SERIES, 1983, (65): : 569 - 572
[10] GALLIUM ARSENIDE SURFACE STRUCTURE AND REACTION KINETICS - FIELD EMISSION MICROSCOPY
ARTHUR, JR
JOURNAL OF APPLIED PHYSICS, 1966, 37 (08) : 3057 - &

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