Annealing Effects on Titanium Dioxide Films by Sol-Gel Spin Coating Method

被引：0
|
作者：
Nadzirah, Sh. [1 ]
Hashim, U. [2 ]
机构：
[1] Univ Malaysia Perlis, Nanostruct Lab On Chip Res Grp, Kangar 01000, Perlis, Malaysia
[2] Univ Malaysia Perlis, Inst Nano Elect Engn, Nanostruct Lab On Chip Res Grp, Kangar, Perlis, Malaysia
来源：
2013 IEEE REGIONAL SYMPOSIUM ON MICRO AND NANOELECTRONICS (RSM 2013) | 2013年
关键词：
Titanium dioxide; Sol gel; Annealing effect; TIO2; TEMPERATURE; ANATASE;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
TiO2 thin films were deposited on silicon dioxide substrates using a sol-gel method. The surface morphologies, structural and electrical properties at different annealing temperatures were studied using atomic force microscopy (AFM), X-ray diffraction (XRD) and Kiethley 6485 pico- ammeter. The XRD pattern displayed the presence of anatase and rutile structures even at low temperature while AFM displayed that the annealing temperature affects the particle size. Current-voltage (I-V) characteristic revealed that the conductivity decreased as the annealing temperature varied from 300 to 900 degrees C.
引用
收藏
页码：159 / 162
页数：4
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