Temperature Dependence of the Zero-Bias Conductance in the Graphene NIS Junction

被引：0

作者：

Wysokinski, M. M. ^{[1
]}

机构：

[1] Jagiellonian Univ, Marian Smoluchowski Inst Phys, PL-30059 Krakow, Poland

来源：

ACTA PHYSICA POLONICA A | 2014年 / 126卷 / 4A期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The temperature dependence of the zero-bias conductance of the graphene-based, ballistic junction composed of the three consecutive regions: normal, with potential barrier ("insulating") and superconducting (NIS), is analyzed within the extended Blonder-Tinkham-Klapwijk approach. Within this approach we have found that oscillatory behavior of the conductance as a function of barrier strength is suppressed by the temperature - the amplitude diminishes with heating up the junction. Moreover, the subtle, although nontrivial feature of the system is reported: the average over the period of the oscillations of the zero-bias conductance for relatively small Fermi level mismatch behaves non-monotonically with the increase of the temperature with the maximum roughly at T/T-c approximate to 0.5

引用

页码：A36 / A39

页数：4

共 50 条

[21] Universal zero-bias conductance for the single-electron transistor
Yoshida, M.
Seridonio, A. C.
Oliveira, L. N.
PHYSICAL REVIEW B, 2009, 80 (23):
[22] ZERO-BIAS CONDUCTANCE MINIMA DUE TO PHONON EXCITATION IN BARRIER
DUKE, CB
SILVERST.SD
BENNETT, AJ
SOLID STATE COMMUNICATIONS, 1967, 5 (10) : R15 - &
[23] ZERO-BIAS CONDUCTANCE MINIMUM IN SCHOTTKY-BARRIER JUNCTIONS
CARRUTHE.T
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1974, 19 (03): : 247 - 247
[24] Abrupt p-n junction using ionic gating at zero-bias in bilayer graphene
Sameer Grover
Anupama Joshi
Ashwin Tulapurkar
Mandar M. Deshmukh
Scientific Reports, 7
[25] Abrupt p-n junction using ionic gating at zero-bias in bilayer graphene
Grover, Sameer
Joshi, Anupama
Tulapurkar, Ashwin
Deshmukh, Mandar M.
SCIENTIFIC REPORTS, 2017, 7
[26] Zero-bias conductance anomaly in bilayer quantum Hall systems
Joglekar, YN
MacDonald, AH
INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 2002, 16 (20-22): : 2936 - 2939
[27] Zero-bias THz Detection using Graphene Transistors
Moon, Jeong-Sun
Seo, Hwa-Chang
Son, Kyung-Ah
Yang, Baohua
Le, Dustin
Fung, Helen
Schmitz, Adele
2015 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS), 2015,
[28] Quality factor for zero-bias conductance peaks in Majorana nanowire
Lai, Yi-Hua
Das Sarma, Sankar
Sau, Jay D.
PHYSICAL REVIEW B, 2022, 106 (09)
[29] Physical mechanisms for zero-bias conductance peaks in Majorana nanowires
Pan, Haining
Das Sarma, S.
PHYSICAL REVIEW RESEARCH, 2020, 2 (01):
[30] Surface roughness, NIS tunneling, and the zero bias conductance peak
Walker, MB
Pairor, P
HIGH TEMPERATURE SUPERCONDUCTIVITY, 1999, 483 : 136 - 140

← 1 2 3 4 5 →