Temperature Dependence of the Zero-Bias Conductance in the Graphene NIS Junction

The temperature dependence of the zero-bias conductance of the graphene-based, ballistic junction composed of the three consecutive regions: normal, with potential barrier ("insulating") and superconducting (NIS), is analyzed within the extended Blonder-Tinkham-Klapwijk approach. Within this approach we have found that oscillatory behavior of the conductance as a function of barrier strength is suppressed by the temperature - the amplitude diminishes with heating up the junction. Moreover, the subtle, although nontrivial feature of the system is reported: the average over the period of the oscillations of the zero-bias conductance for relatively small Fermi level mismatch behaves non-monotonically with the increase of the temperature with the maximum roughly at T/T-c approximate to 0.5