Effect of well width variation on type-I/type-II photoluminescence in GaAs/AlAs single quantum wells

被引：4
|
作者：
Blue, LJ
DanielsRace, T
Yeh, CN
McNeil, LE
机构：
[1] DUKE UNIV,DEPT ELECT ENGN,DURHAM,NC 27708
[2] UNIV N CAROLINA,DEPT PHYS & ASTRON,CHAPEL HILL,NC 27599
来源：
SUPERLATTICES AND MICROSTRUCTURES | 1997年 / 21卷 / 02期
基金：
美国国家科学基金会;
关键词：
D O I：
10.1006/spmi.1995.0162
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
We have investigated type-I/type-II transitions in MBE-grown 20, 35, and 50 Angstrom GaAs/AlAs single quantum wells using photoluminescence (PL) spectroscopy. The 20 and 50 Angstrom wells show a type-I peak, while the 35 Angstrom well has PL peaks corresponding to both type-I and type-II transitions. Peak assignment for the 35 Angstrom-well sample is based upon excitation intensity dependent measurements, and the strength of the type-II transition in this sample is attributed to Gamma-X mixing. Superperiodicity has been put forth as a possible explanation for Gamma-X mixing effects in superlattice structures, but the observation of this phenomenon in a single quantum well structure suggests that superperiodicity is not required for Gamma-X mixing to occur. (C) 1997 Academic Press Limited
引用
收藏
页码：187 / 193
页数：7
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