On the design of polarization-insensitive semiconductor optical amplifiers

被引：0

作者：

Wartak, MS ^{[1
]}

Weetman, P ^{[1
]}

机构：

[1] VTT Elect, FIN-90571 Oulu, Finland

来源：

MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 2002年 / 35卷 / 03期

关键词：

semiconductor optical amplifiers; quantum wells; delta strain;

D O I：

10.1002/mop.10564

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have used the 4 x 4 Luttinger-Kohn Hamiltonian to analyse the presence of delta-strain in quantum well on the polarization properties of semiconductor optical amplifiers. The analysis is performed for a 1.55 mum InGaAsP/InP lattice matched system grown in the [001] direction with and without the electrostatic effects of the carrier charges. The importance of electrostatic effects is indicated. (C) 2002 Wiley Periodicals, Inc.

引用

页码：227 / 230

页数：4

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