Quantum-well laser emitting at 1.2 μm-1.3 μm window monolithically integrated on Ge substrate

被引：0

作者：

Guina, Mircea ^{[1
]}

Isoaho, Riku ^{[1
]}

Viheriala, Jukka ^{[1
]}

Aho, Arto ^{[1
]}

Aho, Antti ^{[1
]}

Tukiainen, Antti ^{[1
]}

机构：

[1] Tampere Univ Technol, Optoelect Res Ctr, Korkeakoulunkatu 3, Tampere, Finland

来源：

43RD EUROPEAN CONFERENCE ON OPTICAL COMMUNICATION (ECOC 2017) | 2017年

关键词：

1180; NM;

D O I：

暂无

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We report a quantum-well laser diode monolithically integrated on Ge substrate. The gain is provided by two GaInNAsSb/GaAs quantum-wells with emission at 1.2 mu m-1.3 mu m. The diode exhibits continuous-wave operation with mW-level output power at room temperature.

引用

页数：3

共 50 条

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