Quantum-well laser emitting at 1.2 μm-1.3 μm window monolithically integrated on Ge substrate

被引：0
|
作者：
Guina, Mircea [1 ]
Isoaho, Riku [1 ]
Viheriala, Jukka [1 ]
Aho, Arto [1 ]
Aho, Antti [1 ]
Tukiainen, Antti [1 ]
机构：
[1] Tampere Univ Technol, Optoelect Res Ctr, Korkeakoulunkatu 3, Tampere, Finland
来源：
43RD EUROPEAN CONFERENCE ON OPTICAL COMMUNICATION (ECOC 2017) | 2017年
关键词：
1180; NM;
D O I：
暂无
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
We report a quantum-well laser diode monolithically integrated on Ge substrate. The gain is provided by two GaInNAsSb/GaAs quantum-wells with emission at 1.2 mu m-1.3 mu m. The diode exhibits continuous-wave operation with mW-level output power at room temperature.
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页数：3
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