Vertical-cavity surface-emitting lasers based on submonolayer InGaAs quantum dots

被引：35

作者：

Blokhin, Sergey A. ^{[1
]}

Maleev, Nikolai A.

Kuzmenkov, Alexander G.

Sakharov, Alexey V.

Kulagina, Marina M.

Shernyakov, Yuri M.

Novikov, Innokenty I.

Maximov, Mikhail V.

Ustinov, Victor M.

Kovsh, Alexey R.

Mikhrin, Sergey S.

Ledentsov, Nikolai N.

Lin, Gray

Chi, Jim Y.

机构：

[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

[2] Russian Acad Sci Res & Educ, St Petersburg Physicotech Ctr, St Petersburg 194021, Russia

[3] NL Nanosemicond GmbH, D-42263 Dortmund, Germany

[4] Ind Technol Res Inst, Hsinchu 310, Taiwan

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 2006年 / 42卷 / 9-10期

关键词：

distributed Bragg reflector (DBR); internal optical losses; quantum dot (QD); single-mode; thermal resistance; vertical-cavity surface-emitting laser (VCSEL);

D O I：

10.1109/JQE.2006.880125

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Molecular beam epitaxy-grown 0.98-mu m vertical-cavity surface-emitting lasers (VCSELs) with a three-stack submonolayer (SML) InGaAs quantum-dot (QD) active region and fully doped AlxGa1-xAs-GaAs DBRs was studied. Large-aperture VCSELs demonstrated internal optical losses less than 0.1% per one pass. Single-mode operation throughout the whole current range was observed for SML QD VCSELs with the tapered oxide apertures diameter less than 2 mu m. Devices with 3-mu m tapered-aperture showed high single-mode output power of 4 mW and external quantum efficiency of 68% at room temperature.

引用

页码：851 / 858

页数：8

共 50 条

[21] Quantum-Dot Vertical-Cavity Surface-Emitting Lasers
D. Bimberg
N. N. Ledentsov
J. A. Lott
MRS Bulletin, 2002, 27 : 531 - 537
[22] Quantum-dot vertical-cavity surface-emitting lasers
Bimberg, D
Ledentsov, NN
Lott, JA
MRS BULLETIN, 2002, 27 (07) : 531 - 537
[23] Study on quantum noise in vertical-cavity surface-emitting lasers
Maurin, I
Hermier, JP
Bramati, A
Ducci, S
Giacobino, E
Kolobov, M
Khoury, AZ
JOURNAL DE PHYSIQUE IV, 2002, 12 (PR5): : 257 - 259
[24] Characteristics of InGaAs submonolayer quantum-dot and InAs quantum-dot photonic-crystal vertical-cavity surface-emitting lasers
Yang, Hung-Pin D.
Hsu, I. -Chen
Chang, Ya-Hsien
Lai, Fang-I
Yu, Hsin-Chieh
Lin, Gray
Hsiao, Ru-Shang
Maleev, Nikolai A.
Blokhin, Sergej A.
Kuo, Hao-Chung
Chi, Jim Y.
JOURNAL OF LIGHTWAVE TECHNOLOGY, 2008, 26 (9-12) : 1387 - 1395
[25] Characteristics of single-mode InGaAs submonolayer quantum-dot photonic-crystal vertical-cavity surface-emitting lasers
Yang, Hung-Pin D.
Hsu, I-Chen
Lai, Fang-I
Lin, Gray
Hsiao, Ru-Shang
Maleev, Nikolai A.
Blokhin, Sergej A.
Kuo, Hao-Chung
Chi, Jim Y.
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2006, 45 (12): : 9078 - 9082
[26] Cavity solitons in vertical-cavity surface-emitting lasers
Tlidi, M.
Vladimirov, A. G.
Pimenov, A.
Gurevich, S. V.
Averlant, E.
Thienpont, H.
Panajotov, K.
SEMICONDUCTOR LASERS AND LASER DYNAMICS VI, 2014, 9134
[27] Cavity solitons in vertical-cavity surface-emitting lasers
Vladimirov, A. G.
Pimenov, A.
Gurevich, S. V.
Panajotov, K.
Averlant, E.
Tlidi, M.
PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES, 2014, 372 (2027):
[28] Reliability of Vertical-Cavity Surface-Emitting Lasers
Herrick, Robert W.
JAPANESE JOURNAL OF APPLIED PHYSICS, 2012, 51 (11)
[29] Vertical-cavity surface-emitting lasers: The applications
Morgan, RA
Lehman, JA
HibbsBrenner, MK
Liu, Y
Bristow, JP
FABRICATION, TESTING, AND RELIABILITY OF SEMICONDUCTOR LASERS II, 1997, 3004 : 91 - 103
[30] Fabrication processes for low threshold InGaAs vertical-cavity surface-emitting lasers
Mukaihara, T
Hatori, N
Ohnoki, N
Mizutani, A
Abe, M
Matsutani, A
Koyama, F
Iga, K
PHYSICA B, 1996, 227 (1-4): : 400 - 403

← 1 2 3 4 5 →