6.8 mW 15 dBm IIP3 CMOS common-gate LNA employing post-linearisation technique

被引：18
|
作者：
Guo, Benqing [1 ]
Wen, Guangjun [2 ]
An, Shiquan [1 ]
机构：
[1] CETC, Res Inst 38, Hefei, Peoples R China
[2] UESTC, Dept Commun & Informat Engn, Chengdu, Peoples R China
来源：
ELECTRONICS LETTERS | 2014年 / 50卷 / 03期
关键词：
biomedical electrodes; biomedical telemetry; Bluetooth; ear; earphones; body area networks; feasibility test; deformable BAN electrodes; body access network; ear canal; implantable medical devices; portable medical devices; ear phones; Bluetooth devices; BAN communication channel; transmission loss spectra; wrist; chest;
D O I：
10.1049/el.2013.3442
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A linearised differential common-gate CMOS low-noise amplifier (LNA) is proposed. The linearity is improved by a cross-coupled post-distortion technique, employing PMOS in a weak inversion region as an auxiliary field effect transistor to cancel the third-order nonlinear currents of a common-gate LNA and impair the related second-order nonlinear currents. Meanwhile, the resulting noise figure is little affected. The LNA implemented in a 0.18 mu m CMOS technology demonstrates that IIP3 and gain have about 8.2 and 1.5 dB improvements in the designed frequency band, respectively. A NF of 3.4 dB is obtained with a power dissipation of 6.8 mW under a 1.8 V power supply.
引用
收藏
页码：149 / 151
页数：2
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