A Novel Generalized Memristor Based on Three-Phase Diode Bridge Rectifier

被引：5
|
作者：
Wu, Chaojun [1 ]
Yang, Ningning [2 ]
Xu, Cheng [2 ]
Jia, Rong [2 ]
Liu, Chongxin [3 ]
机构：
[1] Xian Polytech Univ, Sch Elect & Informat, Xian 710048, Shaanxi, Peoples R China
[2] Xian Univ Technol, Inst Water Resources & Hydroelect Engn, Xian 710048, Shaanxi, Peoples R China
[3] Xi An Jiao Tong Univ, Sch Elect Engn, Xian 710049, Shaanxi, Peoples R China
来源：
COMPLEXITY | 2019年 / 2019卷
基金：
中国国家自然科学基金;
关键词：
16;
D O I：
10.1155/2019/1084312
中图分类号：
O1 [数学];
学科分类号：
0701 ; 070101 ;
摘要：
Memristive characteristics in three-phase diode bridge rectifier circuit are proposed in this paper. The conduction of the diodes is discussed and the characteristics of the pinched hysteresis loop are analyzed by both numerical simulations and circuit simulations. The hysteresis loops of each phase not only are pinched at the origin but also have the other two intersection points in the first quadrant and the third quadrant when three-phase bridge rectifier circuit is running under normal operation. Other conditions are also discussed when a variety of faults conditions occur. The simulation results verify that the three-phase bridge rectifier circuit can be described as a generalized memristor element during several operation states.
引用
收藏
页数：8
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