Ab initio cluster calculations on point defects in amorphous SiO2

被引：12

作者：

Uchino, T ^{[1
]}

机构：

[1] Kyoto Univ, Inst Chem Res, Kyoto 6110011, Japan

来源：

CURRENT OPINION IN SOLID STATE & MATERIALS SCIENCE | 2001年 / 5卷 / 06期

关键词：

D O I：

10.1016/S1359-0286(02)00012-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Recently, there have been considerable advances in quantum-chemical calculations on clusters of atoms designed to model local defect centers in amorphous materials. In particular, this review attempts to put into perspective the recent calculated results of the point defects in pure and doped a-SiO2, which have attracted renewed attention in view of fabrication of Bragg gratings in optical fibers and waveguides. Recent sophisticated calculations may challenge the conventional models of several defect centers in a-SiO2 (C) 2002 Published by Elsevier Science Ltd.

引用

页码：517 / 523

页数：7

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