Unoccupied electronic structure in the surface state of lightly doped SrTiO3 by resonant inverse photoemission spectroscopy -: art. no. 153105

被引：10

作者：

Higuchi, T ^{[1
]}

Nozawa, S

Tsukamoto, T

Ishii, H

Eguchi, R

Tezuka, Y

Yamaguchi, S

Kanai, K

Shin, S

机构：

[1] Sci Univ Tokyo, Dept Appl Phys, Tokyo 1628601, Japan

[2] Univ Tokyo, Inst Solid State Phys, Chiba 2778581, Japan

[3] Hirosaki Univ, Fac Sci & Engn, Hirosaki, Aomori 0368561, Japan

[4] Univ Tokyo, Dept Mat Sci, Tokyo 1138656, Japan

[5] RIKEN, Hyogo 6795148, Japan

来源：

PHYSICAL REVIEW B | 2002年 / 66卷 / 15期

关键词：

D O I：

10.1103/PhysRevB.66.153105

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The unoccupied electronic structure in the surface state of lightly doped SrTiO3 has been studied by resonant inverse-photoemission spectroscopy (RIPES). The RIPES spectra show two features whose energy separations match the t(2g) and e(g) subbands of unoccupied Ti 3d state. A peak clarified by the Ti 3p-->3d resonance effect is observed at similar to6.1 eV above Fermi level (E-F). The similar to6.1 eV peak is not found in the O 1s x-ray absorption spectrum, which reflects the electronic structure of the bulk state. The existence of the similar to6.1 eV peak suggests the correlation effect in the surface state of lightly doped SrTiO3.

引用

页码：1 / 4

页数：4

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