ELLIPSOMETRIC INVESTIGATIONS OF a-As2S3 THIN FILMS OBTAINED BY RF MAGNETRON SPUTTERING

被引：0

作者：

Baschir, L. ^{[1
]}

Opran, C. ^{[2
]}

Savastru, D. ^{[1
]}

Miclos, S. ^{[1
]}

Iovu, M. S. ^{[3
]}

Popescu, A. A. ^{[1
]}

机构：

[1] Natl Inst R&D Optoelect, INOE 2000,409 Atomistilor Str,POB MG5, Magurele 77125, Ilfov, Romania

[2] Univ Politehn Bucuresti, Prod Engn Dept, Splaiul Independentei 313, Bucharest 060042, Romania

[3] Moldavian Acad Sci, Inst Appl Phys, 5 Acad Str, MD-2028 Kishinev, Moldova

来源：

CHALCOGENIDE LETTERS | 2018年 / 15卷 / 04期

关键词：

Chalcogenide Amorphous Materials; Photonics; Plasmonics; Ellipsometry; 2-DIMENSIONAL PHOTONIC STRUCTURES; CHALCOGENIDE GLASSES; AS2S3;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this paper we report the investigation of optical properties of As2S3 amorphous chalcogenide thin films. Arsenic trisulfide is well known amorphous material. As2S3 thin films have important applications in optoelectronics. The most usual method of fabrication is thermal evaporation in vacuum which is known for deposition ofa-As2S3 films with high probability of oxidation in contact with ambient environment. In this paperwe studied the optical properties of As2S3 thin films obtained by a different method as RF magnetron sputtering. Ellipsometric measurements permit the studies of the film optical constants in high absorption spectral domain which give the possibility to determine the own oscillator frequencies. Fitting model based on the well-established exponential absorption inside the band gap tail and Tauc fundamental absorption was used. Thin films of a-As2S3 comparison were made on Si and glass substrates.

引用

页码：199 / 205

页数：7

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