Plasma assisted molecular beam epitaxy of Cu2O on MgO(001): Influence of copper flux on epitaxial orientation

被引：8

作者：

Kracht, M. ^{[1
]}

Schoermann, J. ^{[1
]}

Eickhoff, M. ^{[1
]}

机构：

[1] Univ Giessen, Inst Phys 1, D-35392 Giessen, Germany

来源：

JOURNAL OF CRYSTAL GROWTH | 2016年 / 436卷

关键词：

Surface structure; High resolution X-ray diffraction; Molecular beam epitaxy; Oxides; Semiconducting materials; CHEMICAL-VAPOR-DEPOSITION; OXIDE THIN-FILMS; EXCITONS;

D O I：

10.1016/j.jcrysgro.2015.11.041

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We report on the growth of cuprous oxide on MgO(001) by plasma-assisted molecular beam epitaxy. An increased copper to oxygen ratio enhances the cube-on-cube growth of the Cu2O crystallites compared to the Cu2O(110)parallel to MgO(100) oriented crystallites. This correlates with the occurrence of a (3 root 2x root 2)R45 degrees surface reconstruction observed during growth. This reconstruction is known to be unstable under oxygen-rich conditions and stabilizes the Cu2O(001) surface compared to the Cu2O(110) surface for higher copper to oxygen ratios enhancing cube-on-cube growth. High resolution X-ray diffraction analysis of the resulting cube-on-cube Cu2O layers indicates partial relaxation by 39.7%. Investigations of the optical absorption and photoluminescence properties of the films reveal excitonic contributions comparable to those of single crystals. (C) 2015 Elsevier B.V. All rights reserved.

引用

页码：87 / 91

页数：5

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