Noise Coupling of Through-Via in Silicon and Glass Interposer

被引：0
|
作者：
Lee, Manho [1 ]
Cho, Jonghyun [1 ]
Kim, Joohee [1 ]
Kim, Joungho [1 ]
Kim, Jiseong [1 ]
机构：
[1] Korea Adv Inst Sci & Technol, Terahertz Interconnect & Package Lab, Dept Elect Engn, Taejon 305701, South Korea
来源：
2013 IEEE 63RD ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE (ECTC) | 2013年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The noise coupling between signal through-vias of silicon-based interposer and glass-based interposer are compared by simulating in both frequency and time domain. In addition to noise coupling, through-via's S-21 in both interposers is also simulated and compared. To obtain reasonable data, all dimension parameters are chosen based on existing recent technology and material properties are also chosen based on further chip manufacturing. With these simulations, it is observed that the glass interposer shows better noise blocking performance, and some important features between silicon and glass interposer are qualitatively explained through previous through-via model.
引用
收藏
页码：1806 / 1810
页数：5
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