Electronic structure of the negatively charged silicon-vacancy center in diamond

被引:176
|
作者
Rogers, Lachlan J. [1 ,2 ]
Jahnke, Kay D. [1 ,2 ]
Doherty, Marcus W. [3 ]
Dietrich, Andreas [1 ,2 ]
McGuinness, Liam P. [1 ,2 ]
Mueller, Christoph [1 ,2 ]
Teraji, Tokuyuki [4 ]
Sumiya, Hitoshi [5 ]
Isoya, Junichi [6 ]
Manson, Neil B. [3 ]
Jelezko, Fedor [1 ,2 ]
机构
[1] Univ Ulm, Inst Quantenopt, D-89081 Ulm, Germany
[2] Univ Ulm, IQST, D-89081 Ulm, Germany
[3] Australian Natl Univ, Res Sch Phys & Engn, Laser Phys Ctr, Canberra, ACT 0200, Australia
[4] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050044, Japan
[5] Sumitomo Elect Ind Ltd, Adv Mat R&D Labs, Itami, Hyogo 6640016, Japan
[6] Univ Tsukuba, Res Ctr Knowledge Communities, Tsukuba, Ibaraki 3058550, Japan
来源
PHYSICAL REVIEW B | 2014年 / 89卷 / 23期
关键词
LUMINESCENCE CENTER; FLUORESCENT NANODIAMONDS; COLOR-CENTER; CVD DIAMOND; FILMS;
D O I
10.1103/PhysRevB.89.235101
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The negatively charged silicon-vacancy (SiV-) center in diamond is a promising single-photon source for quantum communications and information processing. However, the center's implementation in such quantum technologies is hindered by contention surrounding its fundamental properties. Here we present optical polarization measurements of single centers in bulk diamond that resolve this state of contention and establish that the center has a < 111 > aligned split-vacancy structure with D-3d symmetry. Furthermore, we identify an additional electronic level and evidence for the presence of dynamic Jahn-Teller effects in the center's 738-nm optical resonance.
引用
收藏
页数:8
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