Electronic structure of the negatively charged silicon-vacancy center in diamond

被引：176

作者：

Rogers, Lachlan J. ^{[1
,2
]}

Jahnke, Kay D. ^{[1
,2
]}

Doherty, Marcus W. ^{[3
]}

Dietrich, Andreas ^{[1
,2
]}

McGuinness, Liam P. ^{[1
,2
]}

Mueller, Christoph ^{[1
,2
]}

Teraji, Tokuyuki ^{[4
]}

Sumiya, Hitoshi ^{[5
]}

Isoya, Junichi ^{[6
]}

Manson, Neil B. ^{[3
]}

Jelezko, Fedor ^{[1
,2
]}

机构：

[1] Univ Ulm, Inst Quantenopt, D-89081 Ulm, Germany

[2] Univ Ulm, IQST, D-89081 Ulm, Germany

[3] Australian Natl Univ, Res Sch Phys & Engn, Laser Phys Ctr, Canberra, ACT 0200, Australia

[4] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050044, Japan

[5] Sumitomo Elect Ind Ltd, Adv Mat R&D Labs, Itami, Hyogo 6640016, Japan

[6] Univ Tsukuba, Res Ctr Knowledge Communities, Tsukuba, Ibaraki 3058550, Japan

来源：

PHYSICAL REVIEW B | 2014年 / 89卷 / 23期

关键词：

LUMINESCENCE CENTER; FLUORESCENT NANODIAMONDS; COLOR-CENTER; CVD DIAMOND; FILMS;

D O I：

10.1103/PhysRevB.89.235101

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The negatively charged silicon-vacancy (SiV-) center in diamond is a promising single-photon source for quantum communications and information processing. However, the center's implementation in such quantum technologies is hindered by contention surrounding its fundamental properties. Here we present optical polarization measurements of single centers in bulk diamond that resolve this state of contention and establish that the center has a < 111 > aligned split-vacancy structure with D-3d symmetry. Furthermore, we identify an additional electronic level and evidence for the presence of dynamic Jahn-Teller effects in the center's 738-nm optical resonance.

引用

页数：8

共 50 条

[1] Electronic structure of the neutral silicon-vacancy center in diamond
Green, B. L.
Doherty, M. W.
Nako, E.
Manson, N. B.
D'Haenens-Johansson, U. F. S.
Williams, S. D.
Twitchen, D. J.
Newton, M. E.
PHYSICAL REVIEW B, 2019, 99 (16)
[2] Initialization and Readout of Nuclear Spins via a Negatively Charged Silicon-Vacancy Center in Diamond
Metsch, Mathias H.
Senkalla, Katharina
Tratzmiller, Benedikt
Scheuer, Jochen
Kern, Michael
Achard, Jocelyn
Tallaire, Alexandre
Plenio, Martin B.
Siyushev, Petr
Jelezko, Fedor
PHYSICAL REVIEW LETTERS, 2019, 122 (19)
[3] Electronic structure of neutral silicon-vacancy complex in diamond
Moliver, SS
TECHNICAL PHYSICS, 2003, 48 (11) : 1449 - 1453
[4] Electronic structure of neutral silicon-vacancy complex in diamond
S. S. Moliver
Technical Physics, 2003, 48 : 1449 - 1453
[5] On-Demand Generation of Neutral and Negatively Charged Silicon-Vacancy Centers in Diamond
Dhomkar, Siddharth
Zangara, Pablo R.
Henshaw, Jacob
Meriles, Carlos A.
PHYSICAL REVIEW LETTERS, 2018, 120 (11)
[6] Strain engineering of the silicon-vacancy center in diamond
Meesala, Srujan
Sohn, Young-Ik
Pingault, Benjamin
Shao, Linbo
Atikian, Haig A.
Holzgrafe, Jeffrey
Gundogan, Mustafa
Stavrakas, Camille
Sipahigil, Alp
Chia, Cleaven
Evans, Ruffin
Burek, Michael J.
Zhang, Mian
Wu, Lue
Pacheco, Jose L.
Abraham, John
Bielejec, Edward
Lukin, Mikhail D.
Atature, Mete
Loncar, Marko
PHYSICAL REVIEW B, 2018, 97 (20)
[7] Vibrational modes of negatively charged silicon-vacancy centers in diamond from ab initio calculations
Londero, Elisa
Thiering, Gergo
Razinkovas, Lukas
Gali, Adam
Alkauskas, Audrius
PHYSICAL REVIEW B, 2018, 98 (03)
[8] Negatively charged boron vacancy center in diamond
Umeda, T.
Watanabe, K.
Hara, H.
Sumiya, H.
Onoda, S.
Uedono, A.
Chuprina, I
Siyushev, P.
Jelezko, F.
Wrachtrup, J.
Isoya, J.
PHYSICAL REVIEW B, 2022, 105 (16)
[9] Optical manipulation of the negative silicon-vacancy center in diamond
Hanks, Michael
Munro, William J.
Nemoto, Kae
PHYSICAL REVIEW A, 2020, 102 (02)
[10] Electronic Structure of the Silicon Vacancy Color Center in Diamond
Hepp, Christian
Mueller, Tina
Waselowski, Victor
Becker, Jonas N.
Pingault, Benjamin
Sternschulte, Hadwig
Steinmueller-Nethl, Doris
Gali, Adam
Maze, Jeronimo R.
Atatuere, Mete
Becher, Christoph
PHYSICAL REVIEW LETTERS, 2014, 112 (03)

← 1 2 3 4 5 →