Formation of Graphene Ribbons onto Atomically Flat 6H-SiC

被引：0

作者：

Rius, Gemma ^{[1
]}

Mestres, Narcis ^{[2
]}

Tanaka, Yayoi ^{[1
]}

Miyazaki, Hidetoshi ^{[1
]}

Eryu, Osamu ^{[1
]}

Godignon, Philippe ^{[3
]}

机构：

[1] Nagoya Inst Technol, Showa Ku, Nagoya, Aichi 4668555, Japan

[2] CSIC, Inst Ciencia Dels Mat ICMAB, Bellaterra 08193, Spain

[3] Centro Nacl Microelectron, Bellaterra, Spain

来源：

SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2 | 2014年 / 778-780卷

关键词：

graphene; CMP; atomic step; terrace; thermal treatment; graphitization; nucleation; SURFACE;

D O I：

10.4028/www.scientific.net/MSF.778-780.1158

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

SiC crystal is a wide band gap material of high hardness and chemical inertness. Graphene is nowadays a ubiquitous 2D material that would revolutionize many applications. Combining the characteristics of SiC and graphene higher performance and efficiency are expected, e.g. for high frequency electronic devices. The obtaining of graphene directly on SiC substrates by a single step thermal decomposition process is promising, but optimal standardized conditions are not established. We present the use of chemical-mechanical polishing (CMP) as a pre-graphene growth SiC conditioning to enable deep comprehension of the mechanisms of SiC decomposition and control towards selective formation of graphene. Particularly, we focus on obtaining graphene ribbons.

引用

页码：1158 / +

页数：2

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