Spectroscopic ellipsometry using the grating division-of-amplitude photopolarimeter (G-DOAP)

被引:5
|
作者
Krishnan, S
Hampton, S
Azzam, RMA
机构
[1] Univ New Orleans, Dept Elect Engn, New Orleans, LA 70148 USA
[2] Containerless Res Inc, Evanston, IL 60201 USA
关键词
spectroscopic ellipsometry; gratings; thin films; silicon; silicon oxide;
D O I
10.1016/j.tsf.2003.11.195
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Spectroscopic ellipsometric (SE) measurements obtained using the grating division-of-amplitude photopolarimeter (G-DOAP) are presented. G-DOAP measures all four Stokes parameters of arbitrarily polarized light over the full spectrum (550-940 nm in the present case), with no moving parts or modulators in less than 1 s. It serves as the reflected-light polarization analyzer of an SE system in which the incident polarization state is fixed, thus facilitating time-resolved SE measurements. SE measurements were performed on silicon wafers with a single oxide layer over a range of incidence angles, incident linear polarization azimuths and oxide-film thicknesses. Methods used to analyze the SE data in the presence of apparent depolarization by thick-oxide wafers are presented. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码:24 / 32
页数:9
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