Low Noise, high linearity, wide bandwidth Amplifier using a 0.35μm SiGeBiCMOS for WLAN applications.

被引：12

作者：

Sadowy, J ^{[1
]}

Telliez, I ^{[1
]}

Graffeuil, J ^{[1
]}

Tournier, E ^{[1
]}

Escotte, L ^{[1
]}

Plana, R ^{[1
]}

机构：

[1] CNRS, LAAS, F-31077 Toulouse, France

来源：

2002 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, DIGEST OF PAPERS | 2002年

关键词：

D O I：

10.1109/RFIC.2002.1012035

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we present the design of an integrated low noise amplifier (LNA) for WLAN applications in the 6 GHz range using a low complexity SiGe BiCMOS technology. The SiGe HBTs used in the design feature a typical cut-off frequency "Ft" of 45 GHz and a typical maximum oscillation frequency "Fmax" of 60 GHz. The LNA exhibits a 17 dB power gain with a 1.4 GHz bandwidth and a noise figure lower than 2.5 dB. The I dB compression point is -18 dBm and the third order intercept point referred to the input Is -7 dBm. We have furthermore observed a good accuracy between simulations and measurements. Finally, we have defined a new figure of merit involving the noise measure and the DC power consumption that shows that our design features a performance at the state of the art.

引用

页码：217 / 220

页数：4

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