Band offsets in c-Si/Si-XII heterojunctions

被引：0

作者：

Mustafa, Jamal I. ^{[1
,2
]}

Malone, Brad D. ^{[1
,2
,3
]}

Cohen, Marvin L. ^{[1
,2
]}

Louie, Steven G. ^{[1
,2
]}

机构：

[1] Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA

[2] Univ Calif Berkeley, Lawrence Berkeley Natl Lab, Div Mat Sci, Berkeley, CA 94720 USA

[3] Harvard Univ, Sch Engn & Appl Sci, Cambridge, MA 02138 USA

来源：

SOLID STATE COMMUNICATIONS | 2014年 / 191卷

基金：

美国国家科学基金会;

关键词：

Semiconductors; Electronic band structure; Electronic transport; SCHOTTKY-BARRIER HEIGHTS; HIGH-PRESSURE PHASE; METASTABLE PHASES; QUASI-PARTICLE; SILICON; TRANSITIONS; GE; SI;

D O I：

10.1016/j.ssc.2014.04.011

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Silicon has a rich phase diagram with a multitude of phases existing over a wide range of pressures and temperatures, in addition to the common cubic silicon (c-Si) phase. One such phase, Si-XII, was first observed less than 2 decades ago in diamond anvil experiments, and more recently as a product of nanoindentation. In some of these latter experiments, I-V measurements were performed to characterize the c-Si/Si-XII interface that results when Si-XII is formed in cubic silicon substrates. In this paper we describe calculations of the band offsets in c-Si/Si-XII heterojunctions. We find that the heterojunction is of Type I and that the band offsets are estimated to be Delta E-v = 0.3 eV and Delta E-c = 0.5 eV for the valence bands and conduction bands, respectively. (C) 2014 Elsevier Ltd. All rights reserved.

引用

页码：6 / 9

页数：4

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