Equation for internal quantum efficiency and its temperature dependence of luminescence, and application to InxGa1-xN/GaN multiple quantum wells

We derive the equation for the internal quantum efficiency (IQE) and its temperature dependence of luminescence. In general, time-resolved photoluminescence (TRPL) must be carried out by changing temperature to obtain the efficiency and the dependence: however, they can be obtained by fitting the equation derived in this study to the temperature characteristics of luminescence integrated intensity. Thus, they are obtained without carrying out TRPL experiments. The equation is applicable to the characteristics not restricted by the measurement method. It is also applied to any semiconductor whose luminescence integrated intensity decreases with increasing temperature. In this study, the equation is applied to the luminescence characteristics of InxGa1-xN/GaN multiple quantum wells. These luminescence characteristics are analyzed in terms of the IQE and the temperature dependence derived using the equation and interpreted in connection with In composition fluctuations, strain effects, and interface quality.