Equation for internal quantum efficiency and its temperature dependence of luminescence, and application to InxGa1-xN/GaN multiple quantum wells

被引：24

作者：

Sasaki, Akio ^{[1
]}

Shibakawa, Shin-ichiro

Kawakami, Yoichi

Nishizuka, Kohji

Narijkawa, Yukio

Mukai, Takashi

机构：

[1] Osaka Electrocommun Univ, Neyagawa, Osaka 5728530, Japan

[2] Kyoto Univ, Dept Elect Sci & Engn, Kyoto 6158510, Japan

[3] Nichia Chem Ind Ltd, Anan, Tokusima 7740044, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2006年 / 45卷 / 11期

关键词：

internal quantum efficiency; carrier recombination lifetime; photoluminescence; InGaN/GaN MQWs; ALAS/GAAS DISORDERED SUPERLATTICES; LIGHT-EMITTING-DIODES; OPTICAL-PROPERTIES; GAN FILMS; PHOTOLUMINESCENCE; GROWTH; CATHODOLUMINESCENCE; RECOMBINATION; SPECTROSCOPY; THICKNESS;

D O I：

10.1143/JJAP.45.8719

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We derive the equation for the internal quantum efficiency (IQE) and its temperature dependence of luminescence. In general, time-resolved photoluminescence (TRPL) must be carried out by changing temperature to obtain the efficiency and the dependence: however, they can be obtained by fitting the equation derived in this study to the temperature characteristics of luminescence integrated intensity. Thus, they are obtained without carrying out TRPL experiments. The equation is applicable to the characteristics not restricted by the measurement method. It is also applied to any semiconductor whose luminescence integrated intensity decreases with increasing temperature. In this study, the equation is applied to the luminescence characteristics of InxGa1-xN/GaN multiple quantum wells. These luminescence characteristics are analyzed in terms of the IQE and the temperature dependence derived using the equation and interpreted in connection with In composition fluctuations, strain effects, and interface quality.

引用

页码：8719 / 8723

页数：5

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