Fast gain and phase recovery of semiconductor optical amplifiers based on submonolayer quantum dots

被引：15

作者：

Herzog, Bastian ^{[1
]}

Owschimikow, Nina ^{[1
]}

Schulze, Jan-Hindrik ^{[2
]}

Rosales, Ricardo ^{[2
]}

Kaptan, Yuecel ^{[1
]}

Kolarczik, Mirco ^{[1
]}

Switaiski, Thomas ^{[1
]}

Strittmatter, Andre ^{[2
]}

Bimberg, Dieter ^{[2
]}

Pohl, Udo W. ^{[2
]}

Woggon, Ulrike ^{[1
]}

机构：

[1] Tech Univ Berlin, Inst Opt & Atomare Phys, D-10623 Berlin, Germany

[2] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany

来源：

APPLIED PHYSICS LETTERS | 2015年 / 107卷 / 20期

关键词：

LINEWIDTH ENHANCEMENT FACTOR; SURFACE-EMITTING LASERS; 1.5; MU-M; DYNAMICS;

D O I：

10.1063/1.4935792

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Submonolayer quantum dots as active medium in opto-electronic devices promise to combine the high density of states of quantum wells with the fast recovery dynamics of self-assembled quantum dots. We investigate the gain and phase recovery dynamics of a semiconductor optical amplifier based on InAs submonolayer quantum dots in the regime of linear operation by one-and two-color heterodyne pump-probe spectroscopy. We find an as fast recovery dynamics as for quantum dot-in-a-well structures, reaching 2 ps at moderate injection currents. The effective quantum well embedding the submonolayer quantum dots acts as a fast and efficient carrier reservoir. (C) 2015 AIP Publishing LLC.

引用

页数：4

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