Elimination of hole injection barriers by conducting polymer anodes in polyfluorene light-emitting diodes

被引：38
|
作者：
Lane, Paul A.
Brewer, Paul J.
Huang, Jingsong
Bradley, Donal D. C.
deMello, John C.
机构：
[1] USN, Res Lab, Washington, DC 20375 USA
[2] Univ London Imperial Coll Sci Technol & Med, Dept Chem, London SW7 2AZ, England
[3] Univ London Imperial Coll Sci Technol & Med, Dept Phys, London SW7 2AZ, England
来源：
PHYSICAL REVIEW B | 2006年 / 74卷 / 12期
关键词：
ENERGY-LEVEL ALIGNMENT; ELECTRIC-FIELD; ELECTROABSORPTION SPECTROSCOPY; METAL; PERFORMANCE;
D O I：
10.1103/PhysRevB.74.125320
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We have measured the built-in potential of a series of polyfluorene-containing light-emitting diodes (LEDs) by electroabsorption spectroscopy. When the anode incorporates a layer of poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS), the inferred anode work function is equal to the ionization potential of the emissive polyfluorene. This result requires that the Fermi level of PEDOT:PSS is pinned to the highest occupied molecular orbital of the emissive polymer. Pinning of the anode Fermi level eliminates the injection barrier to holes and explains the low turn-on bias of polymer LEDs that incorporate PEDOT:PSS. We attribute this phenomenon to electron trapping at the interface between PEDOT:PSS and the emissive layer.
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页数：7
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