Enhanced hole injection in organic light-emitting devices by using Fe3O4 as an anodic buffer layer

被引：43

作者：

Zhang, Dan-Dan ^{[1
]}

Feng, Jing ^{[1
]}

Liu, Yue-Feng ^{[1
]}

Zhong, Yu-Qing ^{[1
]}

Bai, Yu ^{[1
]}

Jin, Yu ^{[1
]}

Xie, Guo-Hua ^{[1
]}

Xue, Qin ^{[1
]}

Zhao, Yi ^{[1
]}

Liu, Shi-Yong ^{[1
]}

Sun, Hong-Bo ^{[1
]}

机构：

[1] Jilin Univ, State Key Lab Integrated Optoelect, Coll Elect Sci & Engn, Changchun 130012, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 22期

关键词：

atomic force microscopy; brightness; buffer layers; current density; indium compounds; iron compounds; metallic thin films; organic light emitting diodes; tin compounds; ultraviolet photoelectron spectra; X-ray spectroscopy; INDIUM TIN OXIDE; SINGLE-LAYER; PERFORMANCE; DIODES; METAL;

D O I：

10.1063/1.3148657

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Hole injection improvement in organic light-emitting devices with Fe3O4 as a buffer layer on indium tin oxide (ITO) has been demonstrated. The luminance and the current density are significantly enhanced by using the Fe3O4/ITO anode, as well as the turn-on voltage is reduced by 1.5 V compared to the devices without the buffer. Results of atom force microscopy, x ray, and UV photoelectron spectroscopy studies reveal that the enhanced hole injection is attributed to the modification of the ITO surface and the reduced hole-injection barrier by the insertion of the Fe3O4 thin film between the ITO and hole-transporting layer.

引用

页数：3

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