Quantum Enhancement of Charge Density Wave in NbS2 in the Two-Dimensional Limit

被引:68
|
作者
Bianco, Raffaello [1 ,2 ,3 ]
Errea, Ion [4 ,5 ,6 ]
Monacelli, Lorenzo [3 ]
Calandra, Matteo [7 ]
Mauri, Francesco [2 ,3 ]
机构
[1] CALTECH, Dept Appl Phys & Mat Sci, Pasadena, CA 91125 USA
[2] Fdn Ist Italiano Tecnol, Graphene Labs, Via Morego, I-16163 Genoa, Italy
[3] Univ Roma La Sapienza, Dipartirnento Fis, Piazzale Aldo Moro 5, I-00185 Rome, Italy
[4] Univ Basque Country, UPV EHU, Gipuzkoako Ingn Eskola, Fis Aplikatua 1 Saila, Europa Plaza 1, Donostia San Sebastian 20018, Basque Country, Spain
[5] CSIC, UPV EHU, Ctr Fis Mat, Manuel de Lardizabal Pasealekua 5, Donostia San Sebastian 20018, Basque Country, Spain
[6] DIPC, Manuel de Lardizabal Pasealekua 4, Donostia San Sebastian 20018, Basque Country, Spain
[7] Sorbonne Univ, CNRS, Inst Nanosci Paris, UMR7588, F-75252 Paris, France
关键词
Transition metal dichalcogenide; monolayer; charge density wave; anharmoncity; size-dependent properties; phonons; LAYER MOS2; MONOLAYER; ORDER;
D O I
10.1021/acs.nanolett.9b00504
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
At ambient pressure, bulk 2H-NbS2 displays no charge density wave instability, which is at odds with the isostructural and isoelectronic compounds 2H-NbSe2, 2H-TaS2, and 2H-TaSe2, and in disagreement with harmonic calculations. Contradictory experimental results have been reported in supported single layers, as 1H-NbS2 on Au(111) does not display a charge density wave, whereas 1H-NbS2 on 6H-SiC(0001) endures a 3 x 3 reconstruction. Here, by carrying out quantum anharmonic calculations from first-principles, we evaluate the temperature dependence of phonon spectra in NbS2 bulk and single layer as a function of pressure/strain. For bulk 2H-NbS2, we find excellent agreement with inelastic X-ray spectra and demonstrate the removal of charge ordering due to anharmonicity. In the two-dimensional limit, we find an enhanced tendency toward charge density wave order. Freestanding 1H-NbS2 undergoes a 3 x 3 reconstruction, in agreement with data on 6H-SiC(0001) supported samples. Moreover, as strains smaller than 0.5% in the lattice parameter are enough to completely remove the 3 x 3 superstructure, deposition of 1H-NbS2 on flexible substrates or a small charge transfer via field-effect could lead to devices with dynamical switching on/off of charge order.
引用
收藏
页码:3098 / 3103
页数:6
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