GaInAsP/InP membrane BH-DFB lasers directly bonded on SOI substrate

被引：42
|
作者：
Maruyama, Takeo
Okumura, Tadashi
Sakamoto, Shinichi
Miura, Koji
Nishimoto, Yoshifumi
Arai, Shigehisa
机构：
[1] Tokyo Inst Technol, Quantum Nanoelect Res Ctr, Meguro Ku, Tokyo 1528552, Japan
[2] Japan Sci & Technol Agcy, CREST, Kawaguchi, Saitama 3320012, Japan
来源：
OPTICS EXPRESS | 2006年 / 14卷 / 18期
关键词：
D O I：
10.1364/OE.14.008184
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
A room-temperature continuous-wave operation under optical pumping was demonstrated with GaInAsP/InP membrane buried-heterostructure (BH) distributed-feedback (DFB) laser directly bonded on an SOI substrate. A threshold pump power of 2.8 mW and a sub-mode suppression ratio of 28 dB were obtained with a cavity length of 120 mu m and a stripe width of 2 mu m. (c) 2006 Optical Society of America.
引用
收藏
页码：8184 / 8188
页数：5
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