Quantum Hall effect in a two-dimensional electron system bent by 90°

被引:19
|
作者
Grayson, M [1 ]
Schuh, D
Bichler, M
Huber, M
Abstreiter, G
Hoeppel, L
Smet, J
Von Klitzing, K
机构
[1] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany
[2] Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany
来源
关键词
quantum Hall effect; edge states; co-propagating; counter-propagating; bent quantum well;
D O I
10.1016/j.physe.2003.11.245
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Using a new MBE growth technique, we fabricate a two-dimensional electron system which is bent around an atomically sharp 90degrees corner. In the quantum Hall regime under tilted magnetic fields, we can measure equilibration between both co- and counter-propagating edge channels of arbitrary filling factor ratio. We present here 4-point-magnetotransport characterization of the comer junction with unequal filling factor combinations which can all be explained using the standard Landauer-Buttiker edge channel picture. The success of this description confirms the realization of the first non-planar quantum Hall edge geometry. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码:181 / 184
页数:4
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