Switchable double wavelength generating vertical external cavity surface-emitting laser

被引：11

作者：

Muszalski, Jan ^{[1
]}

Broda, Artur ^{[1
]}

Trajnerowicz, Artur ^{[1
]}

Wojcik-Jedlinska, Anna ^{[1
]}

Sarzala, Robert P. ^{[2
]}

Wasiak, Michal ^{[2
]}

Gutowski, Piotr ^{[1
]}

Sankowska, Iwona ^{[1
]}

Kubacka-Traczyk, Justyna ^{[1
]}

Golaszewska-Malec, Krystyna ^{[1
]}

机构：

[1] Inst Technol Elektronowej, PL-02668 Warsaw, Poland

[2] Tech Univ Lodz, Inst Fizyki, PL-90924 Lodz, Poland

来源：

OPTICS EXPRESS | 2014年 / 22卷 / 06期

关键词：

HIGH-POWER;

D O I：

10.1364/OE.22.006447

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Switchable, double wavelength generation is demonstrated from a single vertical external cavity surface-emitting laser chip. Power of similar to 0.5W for two wavelengths lambda approximate to 967nm and 1018nm i.e. within the spectral distance of 51nm were registered. In the semiconductor heterostructure a single set of nominally identical quantum wells was enclosed in a single, two-mode resonant microcavity. The wavelength switching was induced by the change of the pump power. The increase or decrease of the pump power changes the active region temperature and thus tunes spectrally the gain spectrum to the one of two modes. (C)2014 Optical Society of America

引用

页码：6447 / 6452

页数：6

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