Study of the parameters of nanoscale layers in nanoheterostructures based on II-VI semiconductor compounds

被引：1
|
作者：
Karavaev, M. B. [1 ]
Kirilenko, D. A. [1 ]
Ivanova, E. V. [1 ]
Popova, T. B. [1 ]
Sitnikova, A. A. [1 ]
Sedova, I. V. [1 ]
Zamoryanskaya, M. V. [1 ]
机构：
[1] Russian Acad Sci, Ioffe Phys Tech Inst, Ul Politekhnicheskaya 26, St Petersburg 194021, Russia
来源：
SEMICONDUCTORS | 2017年 / 51卷 / 01期
基金：
俄罗斯科学基金会;
关键词：
QUANTUM-WELLS; MICROANALYSIS; SYSTEM;
D O I：
10.1134/S1063782617010080
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Wide-gap ZnSe-based nanoheterostructures grown by molecular-beam epitaxy are studied by local cathodoluminescence and X-ray microanalysis. It is shown that the used methods allow nondestructive determination of the depth, elemental composition, and geometrical parameters of the nanoscale ZnCdSe layer. The accuracy of the results is verified by transmission electron microscopy. The research techniques are based on the possibility of varying the primary electron-beam energy, which results in changes in the regions of characteristic X-ray and cathodoluminescence generation.
引用
收藏
页码：54 / 60
页数：7
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