Preparation and termination of well-defined CdTe(100) and Cd(Zn)Te(100) surfaces

被引：31
|
作者：
Heske, C [1 ]
Winkler, U [1 ]
Neureiter, H [1 ]
Sokolowski, M [1 ]
Fink, R [1 ]
Umbach, E [1 ]
Jung, C [1 ]
Bressler, PR [1 ]
机构：
[1] BESSY GMBH,D-14195 BERLIN,GERMANY
来源：
APPLIED PHYSICS LETTERS | 1997年 / 70卷 / 08期
关键词：
D O I：
10.1063/1.118432
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Polar (100) surfaces of commercial CdTe and Cd(Zn)Te single crystals were prepared by ion sputtering and annealing at different temperatures and under Te flux, Cd flux, or in ultrahigh vacuum. Various surface reconstructions with high structural order were obtained. Soft x-ray photoemission investigations of the Cd and Te 3d surface core-level shifts were employed to derive the surface termination, revealing Cd-terminated surfaces for most preparations and various reconstructions. The results suggest that sputter/annealing cycles are suitable for the preparation of highly ordered and uniformly terminated substrates for semiconductor heterojunctions on CdTe and Cd(Zn)Te without the need of an additional buffer layer. (C) 1997 American Institute of Physics.
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页码：1022 / 1024
页数：3
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