Predicting growth rates of SiC epitaxial layers grown by hot-wall chemical vapor deposition

The growth of device quality epitaxial layers requires precise control of the thickness and doping uniformity. By using simulations a better understanding of the growth process can be achieved and process optimization may be possible. The present work uses an extensive chemistry model, to accurately predict growth rates of epitaxial layers grown by chemical vapor deposition. Simulations are made in three dimensions to accurately model the horizontal reactor used in the experiments. Experimental results show four main growth zones, which are characterized by different morphological defects. Certain defects can be attributed to either silicon rich or carbon rich deposition, which is confirmed by X-ray photospectroscopy measurements. Different cases are studied, changing the total pressure in the growth chamber.