Re-growth of single-walled carbon nanotube by hot-wall and cold-wall chemical vapor deposition

被引:16
|
作者
Wang, Huafeng [1 ]
Yamada, Chisato [1 ]
Liu, Jia [2 ]
Liu, Bilu [2 ]
Tu, Xiaomin [3 ]
Zheng, Ming [3 ]
Zhou, Chongwu [2 ]
Homma, Yoshikazu [1 ]
机构
[1] Tokyo Univ Sci, Dept Phys, Shinjuku Ku, Tokyo 1628601, Japan
[2] Univ So Calif, Dept Elect Engn, Los Angeles, CA 90089 USA
[3] NIST, Mat Sci & Engn Div, Gaithersburg, MD 20899 USA
关键词
ELECTRONIC-STRUCTURE; GROWTH; ACETYLENE; PYROLYSIS; C-60;
D O I
10.1016/j.carbon.2015.08.039
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Single-walled carbon nanotube (SWCNT) was synthesized from short nanotubes using chemical vapor deposition (CVD) and the associated factors affecting the re-growth of the SWCNT were both investigated and optimized. Long, dense nanotubes were prepared from a mixture of acetylene and ethanol on air-annealed ST-cut quartz substrates by hot-wall CVD. Raman and photoluminescence analyses of the resulting material demonstrated that SWCNT was generated from the initial seeds since the chiralities of the seeds were maintained in the re-grown SWCNT. The re-growth of SWCNT was also achieved by cold-wall CVD. In both CVD systems, the efficiency of SWCNT re-growth was largely determined by the pretreatment conditions and growth parameters. By varying these factors, the growth of SWCNT from seeds was controlled. The re-growth mechanism is discussed based on experimental observations. (C) 2015 Elsevier Ltd. All rights reserved.
引用
收藏
页码:497 / 502
页数:6
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