Evaluation of sweep modes for switch response on ferroelectric negative-capacitance FETs

被引:5
|
作者
Chen, Kuan-Ting [1 ,2 ]
Chou, Yu-Chen [1 ]
Siang, Gao-Yu [1 ]
Chen, Hong-Yu [1 ]
Lo, Chieh [1 ]
Liao, Chun-Yu [1 ]
Chang, Shu-Tong [2 ]
Lee, Min-Hung [1 ]
机构
[1] Natl Taiwan Normal Univ, Inst Electroopt Sci & Technol, Taipei, Taiwan
[2] Natl Chung Hsing Univ, Dept Elect Engn, Taichung, Taiwan
关键词
Ferroelectricity; -; Capacitance;
D O I
10.7567/1882-0786/ab2600
中图分类号
O59 [应用物理学];
学科分类号
摘要
The sweep modes of gate voltages correlate with the characteristics of ferroelectric negative-capacitance field-effect transistors. Both DC steps and AC pulse sweeps are applied to evaluate the switch response and establish a related model. The subthreshold swing (SS) is unchanged in a DC sweep speed range of 640 mu s step(-1) to 267 ms step(-1). An improved SS is obtained using an AC pulse sweep due to its more stimulated charge for polarization by a multiple-pulse trigger, and the related model is presented with the classical spring-mass system concept. (C) 2019 The Japan Society of Applied Physics
引用
收藏
页数:7
相关论文
共 50 条
  • [31] The impact of charges at the dielectric/channel interface on performance degradation in negative capacitance ferroelectric FETs
    Li, Ming-Hao
    Li, Qiang
    Hsu, Hsiao-Hsuan
    Ying, Lei-Ying
    Zhang, Bao-Ping
    Zheng, Zhi-Wei
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2023, 38 (04)
  • [32] Modeling of Multi-domain Switching in Ferroelectric Materials: Application to Negative Capacitance FETs
    Dasgupta, A.
    Rastogi, P.
    Saha, D.
    Gaidhane, A.
    Agarwal, A.
    Chauhan, Y. S.
    2018 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 2018,
  • [33] Analytical Calculation of Influence of Ferroelectric Properties on Electrical Characteristics Negative Capacitance Germanium FETs
    Peng, Yue
    Han, Genquan
    Chen, Zhibin
    Li, Qinglong
    Zhang, Jincheng
    Hao, Yue
    IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2018, 6 (01): : 233 - 239
  • [34] Physical Thickness 1.x nm Ferroelectric HfZrOx Negative Capacitance FETs
    Lee, M. H.
    Fan, S. -T.
    Tang, C. -H.
    Chen, P. -G.
    Chou, Y. -C.
    Chen, H. -H.
    Kuo, J. -Y.
    Xie, M. -J.
    Liu, S. -N.
    Liao, M. -H.
    Jong, C. -A.
    Li, K. -S.
    Chen, M. -C.
    Liu, C. W.
    2016 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 2016,
  • [35] S-Curve Engineering for ON-State Performance Using Anti-Ferroelectric/Ferroelectric Stack Negative-Capacitance FinFET
    Huang, Shih-En
    Su, Pin
    Hu, Chenming
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2021, 68 (09) : 4787 - 4792
  • [36] Experimental Observation and Simulation Model for Transient Characteristics of Negative-Capacitance in Ferroelectric HfZrO2 Capacitor
    Jang, Kyungmin
    Ueyama, Nozomu
    Kobayashi, Masaharu
    Hiramoto, Toshiro
    IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2018, 6 (01): : 346 - 353
  • [37] Dynamic negative capacitance response in GeTe Rashba ferroelectric
    Orlova, N. N.
    Timonina, A. V.
    Kolesnikov, N. N.
    Deviatov, E. V.
    PHYSICA B-CONDENSED MATTER, 2022, 647
  • [38] Implementation and Performance Evaluation of Ferroelectric Negative Capacitance FET
    R. Deepa
    M. Parimala Devi
    N. Arun Vignesh
    S. Kanithan
    Silicon, 2022, 14 : 2409 - 2419
  • [39] Eliminating Ferroelectric Hysteresis in All-Two-Dimensional Gate-Stack Negative-Capacitance Transistors
    Quan, Hui
    Meng, Dehuan
    Ma, Xuezhou
    Qiu, Chenguang
    ACS APPLIED MATERIALS & INTERFACES, 2023, 15 (38) : 45076 - 45082
  • [40] Implementation and Performance Evaluation of Ferroelectric Negative Capacitance FET
    Deepa, R.
    Devi, M. Parimala
    Vignesh, N. Arun
    Kanithan, S.
    SILICON, 2022, 14 (05) : 2409 - 2419