SrBi2Ta2O9(SBT) thin films prepared by electrostatic spray

被引:8
|
作者
Han, JP
Gu, J
Ma, TP
机构
[1] Ctr. for Microlectron. Mat./Struct., Yale University, New Haven
关键词
D O I
10.1080/10584589708019996
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Ferroelectric SrBi(2)Ta(2)O9 (SBT) thin films were deposited on Pt/SiO2/Si substrates by electrostatic spray, and their structural and electrical properties were investigated. The spray-coated films crystallized upon heating at 680 degrees C-760 degrees C. The XRD patterns showed distinct peaks of (105), (110) and (200) orientations. P-E hysteresis loops were observed with a typical coercive field around 55kV/cm. The remanent polarization, 2P(r), was above 12 mu C/cm(2) for a 160nm film. The fatigue endurance was good, as the reduction of P-r during 10(12) switching cycles was less than 10% of its initial value. The electrostatic spray technique is capable of injecting submicron, stoichiometrically correct, metal-organic SBT droplets onto a rotating substrate, and has the potential to achieve a better step coverage than the spin-on technique while keeping its original advantages.
引用
收藏
页码:229 / 235
页数:7
相关论文
共 50 条
  • [31] Review of SrBi2Ta2O9 thin films capacitor processing
    Dehm, C
    Hartner, W
    Schindler, G
    Bergmann, R
    Hasler, B
    Kasko, I
    Kastner, M
    Schiele, M
    Weinrich, V
    Mazuré, C
    INTEGRATED FERROELECTRICS, 1999, 26 (1-4) : 899 - 915
  • [32] Characterization of imprint behavior for the SrBi2Ta2O9 thin films
    Zhang, ZG
    Xie, D
    Zhu, J
    Ren, TL
    Liu, ZH
    INTEGRATED FERROELECTRICS, 2006, 79 : 245 - 251
  • [33] Review of SrBi2Ta2O9 thin films capacitor processing
    Infineon Technologies, Dept. MP E TF, D-81730 Munich, Germany
    Integr Ferroelectr, 1 (197-213):
  • [34] Studies on the retention behavior of SrBi2Ta2O9 thin films
    Zhang, ZG
    Zhu, JS
    Liu, JS
    Lu, XM
    Yan, F
    Wang, YN
    THIN SOLID FILMS, 2000, 375 (1-2) : 180 - 183
  • [35] Oriented growth of SrBi2Ta2O9 ferroelectric thin films
    Desu, SB
    Vijay, DP
    Zhang, X
    He, BP
    APPLIED PHYSICS LETTERS, 1996, 69 (12) : 1719 - 1721
  • [36] The structure and degradation mechanism of SrBi2Ta2O9 thin films
    Kim, H
    Bae, S
    Kim, J
    Kim, T
    Kim, I
    Lee, H
    Jeong, J
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 1999, 35 : S1214 - S1218
  • [37] Synthesis of SrBi2Ta2O9 (SBT) by means of a soluble Ta(V) precursor
    Nelis, D
    Van Werde, K
    Mondelaers, D
    Vanhoyland, G
    Van Bael, MK
    Mullens, J
    Van Poucke, LC
    JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, 2001, 21 (10-11) : 2047 - 2049
  • [38] Role of recovery anneals for chemical solution deposition (CSD) based SrBi2Ta2O9 (SBT) thin films
    Hartner, W
    Schindler, G
    Weinrich, V
    Nagel, N
    Engelhardt, M
    Joshi, W
    Solayappan, N
    Derbenwick, G
    Dehm, C
    Mazure, C
    INTEGRATED FERROELECTRICS, 1998, 22 (1-4) : 543 - 553
  • [39] Environmentally safe synthesis of SrBi2Ta2O9 and SrBi2Nb2O9 thin films
    González-Aguilar, G
    Elisabete, M
    Costa, V
    Salvado, IMM
    JOURNAL DE PHYSIQUE IV, 2005, 128 : 41 - 44
  • [40] Epitaxy of (106)-oriented SrBi2Ta2O9 and SrBi2Nb2O9 thin films
    Nagahama, T
    Manabe, T
    Yamaguchi, I
    Kumagai, T
    Tsuchiya, T
    Mizuta, S
    THIN SOLID FILMS, 1999, 353 (1-2) : 52 - 55