Reduced micropipe density improves SiC water quality

被引:0
|
作者
不详
机构
关键词
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:26 / 26
页数:1
相关论文
共 50 条
  • [41] Study of micropipe structure in SiC by x-ray phase contrast imaging
    Kohn, V. G.
    Argunova, T. S.
    Je, Jung Ho
    APPLIED PHYSICS LETTERS, 2007, 91 (17)
  • [42] 4H-SiC device scaling development on repaired micropipe substrates
    Schattner, T.E.
    Casady, J.B.
    Smith, M.C.D.
    Mazzola, M.S.
    Dimitriev, V.A.
    Rentakova, S.V.
    Saddow, S.E.
    Materials Science Forum, 2000, 338
  • [43] Improvement in electrical properties of 4H-SiC epilayers by micropipe dissociation
    Kamata, I.
    Tsuchida, H.
    Jikimoto, T.
    Izumi, K.
    Japanese Journal of Applied Physics, Part 2: Letters, 2001, 40 (10 A):
  • [44] 4H-SiC device scaling development on repaired micropipe substrates
    Schattner, TE
    Casady, JB
    Smith, MCD
    Mazzola, MS
    Dimitriev, VA
    Rentakova, SV
    Saddow, SE
    SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000, 338-3 : 1203 - 1206
  • [45] Formation of super-dislocation/micropipe complexes in 6H-SiC
    Carnegie Mellon Univ, Pittsburgh, United States
    Materials Science Forum, 1998, 264-268 (pt 1): : 371 - 374
  • [46] Improvement in electrical properties of 4H-SiC epilayers by micropipe dissociation
    Kamata, I
    Tsuchida, H
    Jikimoto, T
    Izumi, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2001, 40 (10A): : L1012 - L1014
  • [47] Compound Tongyang Fumai decoction ((sic) (sic) (sic) (sic) (sic) ) improves quality of life in sick sinus syndrome: a randomized controlled study
    Wu, Qiaomin
    Guan, Xuanke
    Liu, Jinfeng
    Wang, Yanli
    Chang, Xing
    Liu, Zhiming
    Liu, Ruxiu
    JOURNAL OF TRADITIONAL CHINESE MEDICINE, 2024, 44 (06) : 1247 - 1253
  • [48] Influence of micropipe and domain boundary in SiC substrate on the DC characteristics of AlGaN/GaN HFET
    Sazawa, H.
    Kato, T.
    Kojima, K.
    Furuta, K.
    Hirata, K.
    Kosaki, M.
    Kinoshita, M.
    Mitani, T.
    Nakashima, S.
    Okumura, H.
    SILICON CARBIDE AND RELATED MATERIALS 2006, 2007, 556-557 : 1043 - +
  • [49] Effect of growth condition on micropipe filling of 4H-SiC epitaxial layer
    Kojima, K.
    Nishizawa, S.
    Kuroda, S.
    Okumura, H.
    Arai, K.
    JOURNAL OF CRYSTAL GROWTH, 2005, 275 (1-2) : E549 - E554
  • [50] Formation mechanism of Type 2 micropipe defects in 4H-SiC crystals
    Liu, C. J.
    Peng, T. H.
    Wang, S. C.
    Wang, B.
    Sun, W.
    Wang, G.
    Wang, W. J.
    Chen, X. L.
    CRYSTENGCOMM, 2013, 15 (07): : 1307 - 1313