Low-Temperature Processed Polycrystalline Silicon Thin-Film Transistor with Aluminum-Replaced Source and Drain Regions

被引：0
|
作者：
Zhang, Dongli [1 ]
Kwok, Hoi-Sing [1 ]
Wong, Man [1 ]
机构：
[1] Hong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Hong Kong, Hong Kong, Peoples R China
来源：
2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1-4 | 2008年
关键词：
D O I：
10.1109/ICSICT.2008.4734706
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Low-temperature polycrystalline silicon (poly-Si) thin-film transistors (TFTs) with metal-replaced source and drain regions have been fabricated and characterized Several technological schemes for replacing poly-Si with aluminum have been investigated and the relative merits of each are compared.
引用
收藏
页码：974 / 977
页数：4
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