Si doping of cubic heteroepitaxial GaN layers studied by Raman scattering

被引：4
|
作者：
Bentoumi, G
Deneuville, A
Bustarret, E
Daudin, B
Feuillet, G
Martinez, E
Aboughe-Nze, P
Monteil, Y
机构：
[1] CNRS, Etud Proprietes Elect Solides Lab, F-38042 Grenoble 9, France
[2] Univ Grenoble 1, F-38042 Grenoble, France
[3] CEA, SPMM, Dept Rech Fondamentale Matiere Condensee, F-38054 Grenoble 9, France
[4] Univ Lyon 1, Lab Multimat & Interfaces, F-69622 Villeurbanne, France
来源：
THIN SOLID FILMS | 2000年 / 364卷 / 1-2期
关键词：
cubic GaN; Si doping; Raman; cubic SiC; mobility;
D O I：
10.1016/S0040-6090(99)00911-6
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The room temperature concentration and mobility of electrons introduced by Si-doped cubic GaN films have been derived from their Raman spectra. These films were grown by MBE on cubic SiC thin films deposited by CVD on Si. The Si-doped films has a mobility lower (in the 50 to 210 cm(2) V/s range) than (1650 cm(2) V/s) the undoped films, attributed to the significant increase upon doping of the hexagonal parasitic volume fraction in the films. (C) 2000 Elsevier Science S.A. All rights reserved.
引用
收藏
页码：107 / 110
页数：4
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